Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates |
| |
| Authors: | T. Detchprohm M. Zhu Y. Li Y. Xia L. Liu D. Hanser C. Wetzel |
| |
| Affiliation: | 1. Future Chips Constellation, and Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA;2. Kyma Technologies, Inc., 8829 Midway West Road, Raleigh, NC 27617, USA |
| |
| Abstract: | We demonstrate homoepitaxial growth of GaInN/GaN-based green (500–560 nm) light emitting diodes (LEDs) on a-plane and m-plane quasi-bulk GaN prepared by hydride vapor phase epitaxy (HVPE). We find that in order to achieve an emission peak wavelength beyond 500 nm, a minimum InN-fraction of ∼14% is needed for both, a- and m-plane quantum wells (QWs), while ∼8% are enough for c-plane-oriented QWs. Besides increasing the InN-fraction in these non-polar QWs, widening the QW also proves to effectively shift the emission to longer wavelengths without loosing efficiency with the benefit of maintaining a low InN-fraction. |
| |
| Keywords: | 61.72.Lk 68.37.Ps 68.65.Ac 71.55.Eq 81.15.Gh 85.60.Jb 78.60.Hk |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
