InGaN growth with various InN mole fractions on <em>m</em>-plane ZnO substrate by metalorganic vapor phase epitaxy期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy

Authors:	Yohjiro Kawai Shinya OhsukaMotoaki Iwaya Satoshi KamiyamaHiroshi Amano Isamu Akasaki

Institution:	Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Abstract:	We have demonstrated In_xGa₁₋_xN epitaxial growth with InN mole fractions of x=0.07 to 0.17 on an m-plane ZnO substrate by metalorganic vapor phase epitaxy for the first time. The crystalline quality of the epilayers was found to be much higher than that of epilayers grown on a GaN template on an m-plane SiC substrate.

Keywords:	A1 Stresses A3 Metalorganic vapor phase epitaxy B1 Gallium compounds B1 Zinc compounds B2 Semiconducting III&ndash V materials
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