MOVPE growth and properties of GaN on (1 1 1)Si using an AlInN intermediate layer |
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Authors: | M Irie N Koide Y Honda M YamaguchiN Sawaki |
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Institution: | Department of Electronics and Akasaki Research Center, Nagoya University, 3C-1 Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan |
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Abstract: | Using an AlInN intermediate layer, GaN was grown on (1 1 1)Si substrate by selective metalorganic vapor phase epitaxy. The variation of the surface morphology was investigated as a function of the In composition and thickness of the AlInN layer. It was found that the In composition in the AlInN layer was a function of the growth temperature and thickness. Because of the small band offset at the AlInN/Si hetero-interface, we have achieved a low series resistance of the order of 9 Ω (0.0036 Ω cm2) across the GaN/AlInN/AlN/Si layer structure. |
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Keywords: | 81 15 Gh 68 37 Lp 73 40 Kp 73 61 Ey 78 55 Cr 78 60 Fi |
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