Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers |
| |
| Authors: | Yu-Li Tsai Ray-Hua Horng Ming-Chun Tseng Chia-hao Kuo Po-Liang Liu Dong-Sing Wuu Der-Yuh Lin |
| |
| Institution: | 1. Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C;2. Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan, R.O.C;3. Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C;4. Department of Electronic Engineering, National Changhua University of Education, Changhua 500, Taiwan, R.O.C |
| |
| Abstract: | In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be ∼0.5%, which reflects the actual effect of lattice strain on composition during growth stage. |
| |
| Keywords: | 61 05 cp 68 55 J&minus 78 66 Fd 81 15 Gh |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
