HVPE growth of semi-polar (1 1 2¯ 2)GaN on GaN template (1 1 3)Si substrate |
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Authors: | N Suzuki T Uchida T Tanikawa T HikosakaM Yamaguchi N Sawaki |
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Institution: | Department of Electronics and Akasaki Research Center, Nagoya University 3C-1-631 Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan |
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Abstract: | The hydride-vapour-phase-epitaxial (HVPE) growth of semi-polar (1 1 2¯ 2)GaN is attempted on a GaN template layer grown on a patterned (1 1 3) Si substrate. It is found that the chemical reaction between the GaN grown layer and the Si substrate during the growth is suppressed substantially by lowering the growth temperatures no higher than 900 °C. And the surface morphology is improved by decreasing the V/III ratio. It is shown that a 230-μm-thick (1 1 2¯ 2)GaN with smooth surface is obtained at a growth temperature of 870 °C with V/III of 14. |
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Keywords: | 81 15 Gh 68 37 Lp 78 55 Cr 78 60 Fi |
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