Bulk single-crystal growth of ternary AlxGa1−xN from solution in gallium under high pressure |
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| Authors: | A Belousov S Katrych J Jun J Zhang D Günther Roman Sobolewski J Karpinski B Batlogg |
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| Institution: | 1. Laboratory for Solid State Physics, ETH Zurich, 8093 Zurich, Switzerland;2. Laboratory for Inorganic Chemistry, ETH Zurich, 8093 Zurich, Switzerland;3. Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA |
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| Abstract: | We have successfully grown bulk, single crystals of AlxGa1−xN with the Al content x ranging from 0.5 to 0.9. Samples were grown from Ga melt under high nitrogen pressure (up to 10 kbar) and at high temperature (up to 1800 °C) using a gas pressure system. The homogeneity and Al content of the crystals were investigated by X-ray diffraction and laser ablation mass spectrometry. On the basis of the high-pressure experiments, the corresponding pressure–temperature (p–T) phase diagram of Al–Ga–N was derived. The bandgap of the material was determined by the femtosecond two-photon absorption autocorrelation method and is equal to 5.81±0.01 eV for the Al0.86Ga0.14N crystals. |
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| Keywords: | 07 35 +k 81 05 Ea 81 10 Dn 81 30 Dz |
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