Growth of thick GaInN on grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC |
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Authors: | Tetsuya Matsubara Ryota SendaDaisuke Iida Motoaki IwayaSatoshi Kamiyama Hiroshi AmanoIsamu Akasaki |
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Institution: | Faculty of Science and Technology, Meijo University 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan |
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Abstract: | We succeeded in growing high-crystalline-quality thick (1 0 1¯ 1¯) Ga0.92In0.08N films on a grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC underlying layer. We also fabricated GaInN/GaN multiple quantum wells (MQWs) with a peak wavelength of 580 nm on a high-crystalline-quality thick GaInN film. The photoluminescence intensity of the MQWs is about six times higher than that of MQWs grown on planar GaN and twice as high as that of MQWs grown on a GaN underlying layer having the same grooved structure. |
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Keywords: | 61 72 uj 73 21 Fg |
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