|
|||||
|
|
Growth and characterization of epitaxial Fe0.8Ga0.2/0.69PMN-0.31PT heterostructures |
|
| Authors: | Dan Seguin Madhana Sunder Lakshmi Krishna Alexander Tatarenko PD Moran |
| Institution: | 1. Michigan Technological University, Department of Materials Science and Engineering, 1400 Townsend Drive, 512 M&M bldg., Houghton, MI 49931, USA;2. Oakland University, Department of Physics, 2200 N. Squirrel Road, Rochester, MI 48309, USA |
| Abstract: | Fe0.8Ga0.2 films were deposited on bulk single-crystal (0 0 1) 0.69PMN-0.31PT substrates by DC magnetron sputtering to make magnetoelectric bilayer composites. Films deposited at temperatures below 600 °C were X-ray amorphous. Films deposited at temperatures of 600 °C and higher exhibited a single-crystal (0 0 1) disordered BCC structure. The crystalline FeGa films demonstrate a 45° twisted cube-on-cube epitaxial relationship with the PMN–PT substrates. Heterostructures with an X-ray amorphous FeGa film exhibited zero magnetoelectric response. Heterostructures with a 990 nm epitaxial FeGa film exhibited a large inverse magnetoelectric voltage coefficient of 13.4 (G cm)/V. |
| Keywords: | 85 80 Jm 61 05C 81 15 &minus z |
| 本文献已被 ScienceDirect 等数据库收录！ | |