Growth of (1 0 1¯ 3¯ ) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy |
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Authors: | T.B. Wei Q. HuR.F. Duan X.C. WeiZ.Q. Huo J.X. WangY.P. Zeng G.H. WangJ.M. Li |
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Affiliation: | Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract: | The crystalline, surface, and optical properties of the (1 0 1¯ 3¯) semipolar GaN directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated. It was found that the increase of V/III ratio led to high quality (1 0 1¯ 3¯) oriented GaN epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. After etching in the mixed acids, the inclined pyramids dominated the GaN surface with a density of 2×105 cm−2, revealing the N-polarity characteristic. In the low-temperature PL spectra, weak BSF-related emission at 3.44 eV could be observed as a shoulder of donor-bound exciton lines for the epilayer at high V/III ratio, which was indicative of obvious reduction of BSFs density. In comparison with other defect related emissions, a different quenching behavior was found for the 3.29 eV emission, characterized by the temperature-dependent PL measurement. |
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Keywords: | 61.10.Eq 61.16.Bg 61.72.Nn 78.55.Cr 78.55.&minus m 81.15.Kk |
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