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Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy—Formation of high-quality GaN microcolumns |
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| Authors: | Kei Kato Katsumi Kishino Hiroto Sekiguchi Akihiko Kikuchi |
| Institution: | 1. Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan;2. Sophia Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan;3. CREST, Japan Science and Technology Agency, Kawaguchi, Japan |
| Abstract: | GaN crystals were overgrown on GaN nanocolumn platforms with a Be-doped coalesced layer by rf-plasma-assisted molecular-beam epitaxy (rf-MBE). The overgrown GaN included large micrometer-scale hexagonal columnar crystals. These microcrystals were named ‘microcolumns’ and showed high optical properties comparable to those of GaN bulk crystals grown by hydride vapor phase epitaxy (HVPE). |
| Keywords: | 78 55 Et 78 67 &minus n 61 46 Hk 81 15 Hi |
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