Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates |
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| Authors: | Sheng-Po Chang Shoou-Jinn Chang Chien-Yuan Lu Yu-Zung Chiou Ricky W. Chuang Hung-Chieh Lin |
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| Affiliation: | 1. Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan;2. Departments of Electronic Engineering, Southern Taiwan University of Technology, Tainan 710, Taiwan;3. Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 70101, Taiwan |
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| Abstract: | Nitride-based metal–semiconductor–metal ultraviolet (UV) photodetectors prepared on Si (1 1 1) substrate with stacked buffer layers were proposed and prepared. With 5 V applied bias, it was found that dark current of the fabricated device was only 7.95×10−12 A. With an applied bias of 10 V, it was found that peak responsivity was 0.06 A/W, corresponding to quantum efficiency of 21.2% while UV/visible rejection ratio was 244. With 5 V applied bias, it was found that noise equivalent power, NEP and detectivity, D*, of our detector were 1.70×10−13 W and 1.18×1013 cm Hz0.5 W−1, respectively. |
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| Keywords: | B3. MSM B3. Photodetectors B2. Si substrates B3. Noise B3. NEP |
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