Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates

A process optimization of the growth of silicon carbide (SiC) epilayers on 4° off-axis 4H-SiC substrates is reported. Process parameters such as growth temperature, C/Si ratio and temperature ramp-up conditions are optimized for the standard non-chlorinated growth in order to grow smooth epilayers without step bunching and triangular defects. The growth of 6-μm-thick n-type-doped epitaxial layers on 75-mm-diameter wafers is demonstrated as well as that of 20-μm-thick layer. The optimized process was then transferred to a chloride-based process and a growth rate of 28 μm/h was achieved without morphology degradation. A low growth temperature and a low C/Si ratio are the key parameters to reduce both the step bunching and the formation of triangular defects.