Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (1 1 1) B using N2 carrier gas |
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| Authors: | M Akabori K Sladek H Hardtdegen Th Schäpers D Grützmacher |
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| Institution: | 1. Institute of Bio- and Nanosystems (IBN-1), Jülich-Aachen Research Alliance—Fundamentals of Future Information Technology (JARA-FIT), Forschungszentrum Jülich, 52425 Jülich, Germany;2. Center for Nano-Materials and Technology (CNMT), Japan Advanced Institute of Science and Technology (JAIST), 1-1, Asahidai, Nomi, Ishikawa 923-1292, Japan |
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| Abstract: | The influence of temperature on selective area (SA) InAs nanowire growth was investigated for metal-organic vapor phase epitaxy (MOVPE) using N2 as the carrier gas and (1 1 1) B GaAs substrates. In contrast to the growth temperature range – below 600 °C – reported for hydrogen ambient, the optimal growth temperature between 650 and 700 °C was 100 K higher than the optimal ones for H2 carrier gas. At these temperatures, nanowires with aspect ratios of about 80 and a symmetric hexagonal shape were obtained. The results found are attributed to the physical and chemical properties of the carrier gas. |
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| Keywords: | 81 07 &minus b 81 15 Kk 81 05 Ea 68 37 Hk |
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