Crystal growth and characterization of GaCrN nanorods on Si substrate |
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Authors: | H Tambo S KimuraY Yamauchi Y HiromuraYK Zhou S EmuraS Hasegawa H Asahi |
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Institution: | The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan |
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Abstract: | GaCrN nanorods were grown on GaN nanorods by RF-plasma-assisted molecular beam epitaxy. GaN nanorods were grown on Si (0 0 1) substrates with native SiO2. Cr doping into GaCrN nanorods was conducted at substrate temperatures of 800 and 550 °C. Cross-sectional transmission electron microscopy images revealed that the diameter of GaCrN nanorod gradually increases with growth proceeding at 550 °C, while the growth at 800 °C does not change the nanorod diameter. Low-temperature growth enhances the growth perpendicular to the c-axis and decreases the growth along the c-axis. It was found that the solubility limit of Cr atoms in GaCrN is much higher for the low-temperature growth than for the high-temperature growth. It was also found that the highest saturation magnetization is obtained at some optimum Cr cell temperature. |
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Keywords: | 75 50 Pp 78 55 Cr 61 46 Hk |
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