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Weighted oscillator strengths and lifetimes for the Si II spectrum |
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| Authors: | G. H. Cavalcanti F. O. Borges A. J. Mania R. V. Orloski A. G. Trigueiros |
| Affiliation: | a Instituto de Física, Universidade Federal Fluminense, UFF, Av. Gal Milton Tavares de Sousa, Campus da Praia Vermelha-Gragoatá, Niterói, RJ 24210-340, Brazil b Departamento de Ciências Exatas e Tecnológicas, Universidade Estadual de Santa Cruz, UESC, Ilhéus, Bahia 45650-000, Brazil c Instituto de Física “Gleb Wataghin”, Universidade Estadual de Campinas, UNICAMP, Campinas, São Paulo 13083-970, Brazil |
| Abstract: | The weighted oscillator strengths (gf) and the lifetimes for Si II presented in this work were carried out in a multiconfiguration Hartree–Fock relativistic (HFR) approach. In this calculation, the electrostatic parameters were optimized by a least-squares procedure, in order to improve the adjustment to experimental energy levels. This method produces gf-values that are in better agreement with intensity observations and lifetime values that are closer to the experimental ones. In this work we presented all the experimentally known electric dipole Si II spectral lines. |
| Keywords: | Atomic spectrum Si II spectrum gf-values Lifetimes |
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