|
|||||
|
|
High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm |
|
| Authors: | Zhang Z Ruan N J Zhou F Liu Z J Xu L J |
| Institution: | 1.Beijing Institute of Space Mechanic and Electricity, Beijing, 100076, China ;2.School of Instrument Science and Opto-Electronic Engineering, Beihang University, Beijing, 100191, China ; |
| Abstract: | A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 mm3. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |