|
|||||
|
|
Simulation of daytime variations in the characteristics of a-Si:H solar cells |
|
| Authors: | Yu. V. Kryuchenko A. V. Sachenko A. V. Bobyl’ V. P. Kostylev I. O. Sokolovskyi E. I. Terukov V. N. Verbitskii Yu. A. Nikolaev |
| Affiliation: | 1. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028, Ukraine 2. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia 3. Research Center of Thin-Film Technologies in Power Engineering, Ioffe Physical Technical Institute, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
| Abstract: | The time dependences of the key characteristic of a-Si:H solar cells over daylight hours are theoretically simulated. The model is used to calculate the time dependences for an arbitrary geographic latitude in the interval 30°–60° and arbitrary day of the year. The calculated results are illustrated for a geographic latitude of 45° and equinox. The relative variations in the characteristics of the a-Si:H solar cells are valid with a relatively high accuracy for the solar cells based on alternative semiconductors provided that their efficiency ranges form 7 to 20%. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |