Single-layer graphene oxide films on a silicon surface |
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Authors: | A. E. Aleksenskii P. N. Brunkov A. T. Dideikin D. A. Kirilenko Yu. V. Kudashova D. A. Sakseev V. A. Sevryuk M. S. Shestakov |
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Affiliation: | 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
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Abstract: | A method is proposed to produce large-area single-layer graphene oxide films on the surface of semiconductor silicon wafers by precipitation from aqueous suspensions. Graphene oxide is synthesized from natural crystalline graphite during chemical oxidation and represents a wide-gap insulator. Single-layer graphene with a homogeneous-fragment size up to 50 μm can be formed by the reduction of graphene oxide films, and this size is significantly larger than those achieved to date. |
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