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Single-layer graphene oxide films on a silicon surface
Authors:A. E. Aleksenskii  P. N. Brunkov  A. T. Dideikin  D. A. Kirilenko  Yu. V. Kudashova  D. A. Sakseev  V. A. Sevryuk  M. S. Shestakov
Affiliation:1. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
Abstract:A method is proposed to produce large-area single-layer graphene oxide films on the surface of semiconductor silicon wafers by precipitation from aqueous suspensions. Graphene oxide is synthesized from natural crystalline graphite during chemical oxidation and represents a wide-gap insulator. Single-layer graphene with a homogeneous-fragment size up to 50 μm can be formed by the reduction of graphene oxide films, and this size is significantly larger than those achieved to date.
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