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Elimination of interface states in the GaAs band-gap by cyanide treatment: XPS measurements under bias |
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| Authors: | Tomohiro Kubota,Já n Ivan?o,Masao Takahashi,Kenji YonedaYoshihiro Todokoro,Hikaru Kobayashi |
| Affiliation: | a The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan b ULSI Process Technology Development Center, Matsushita Electronics Corporation, Nishikujo-Kasugacho, Minami-ku, Kyoto 601-8413, Japan c Corporate Planning Department, Matsushita Electronics Corporation, 1, Koutari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan d CREST, Japan Science and Technology Corporation, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan |
| Abstract: | Energy distribution of interface states for GaAs-based metal-oxide-semiconductor structure with an ultra-thin silicon oxide layer is obtained from “XPS measurements under bias.” The interface state spectra have peaked-structure at 0.7 and 0.9 eV above the valence band maximum and they are attributed to (++/+) and (+/0) transitions of AsGa antisite defects at the interface. When cyanide treatment (i.e., the immersion in a KCN aqueous solution followed by the rinse in boiling water) is performed after the deposition of the silicon oxide layer, the interface state density is decreased to ∼50%, resulting in the partial unpinning of the Fermi level. |
| Keywords: | X-ray photoelectron spectroscopy Interface states Gallium arsenide Silicon oxides Crystalline-amorphous interfaces Semiconductor-insulator interfaces Metal-oxide-semiconductor (MOS) structures |
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