RT growth of acetonitrile and acrylonitrile on Si(0 0 1)-2 × 1 studied by XPS and LEED |
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Authors: | M. Simeoni L. LozziS. Santucci |
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Affiliation: | Department of Physics and INFM, University of L’Aquila, via Vetoio, 67010 Coppito (L’Aquila), Italy |
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Abstract: | In this work we show the adsorption of acetonitrile (CH3CN) and acrylonitrile (CH2CHCN) on Si(0 0 1)-2 × 1 at room temperature by increasing the molecular doses. Especially, by means of XPS and LEED data, we stress the action of these molecules on the silicon surface locating the dangling-bonds quasi-saturation within 10 L. The shortage of nitrogen XPS signal and some anomalies in carbon spectra point to an invading action from a traditional X-ray source (Al-Kα line) against chemisorbed molecules. In particular, we think that a long exposure to this radiation could break carbon-silicon bonds changing some adsorption geometries and making desorb molecular fragments. |
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Keywords: | Low energy electron diffraction (LEED) X-ray photoelectron spectroscopy Chemisorption Silicon |
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