| γ辐照室温短波HgCdTe光伏器件的导纳谱研究 |
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| 引用本文： | 胡新文,赵军,陆慧庆,李向阳,方家熊.γ辐照室温短波HgCdTe光伏器件的导纳谱研究[J].物理学报,1999,48(6):1107-1112. |
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| 作者姓名： | 胡新文 赵军 陆慧庆 李向阳 方家熊 |
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| 作者单位： | 中国科学院传感技术国家重点实验室、上海技术物理研究所，上海 200083 |
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| 基金项目： | 国防科技预研基金(批准号：11·3·2②）和国家自然科学基金（批准号：19805014)资助的课题. |
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| 摘 要： | 利用变频导纳谱研究了γ辐照前后Hg1－xCdxTe(x=0.6)n+-on-p结中的深能级缺陷．辐照前其缺陷能级位置在价带上0.15 eV，俘获截面σp＝2.9×10-18cm2，缺陷密度Nt＝6.5×1015cm-3，初步认为是Hg空位或与其相关的复合缺陷；经过104Gy的γ辐照后其能级变得更深，在价带上0.19 eV，同时其俘获截面增加了近一个数量级，而缺陷密度基本上没有变化．γ辐照引入的这种能级变化最终使器件的性能(探测率)下降了1/2以上．
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| 关 键 词： | 汞镉碲 光伏器件 γ辐射 导纳谱 |
| 收稿时间： | 9/7/1998 12:00:00 AM |
GAMMA IRRADIATION ON ROOM TEMPERATURE SHOPR-WAVELENGTH HgCdTe PHOTOVOLTAIC DEVICE STUDIED BY ADMITTANCE SPECTROSCOPY |
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| HU XIN-WEN,ZHAO JUN,LU HUI-QING,LI XIANG-YANG and FANG JIA-XIONG.GAMMA IRRADIATION ON ROOM TEMPERATURE SHOPR-WAVELENGTH HgCdTe PHOTOVOLTAIC DEVICE STUDIED BY ADMITTANCE SPECTROSCOPY[J].Acta Physica Sinica,1999,48(6):1107-1112. |
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| Authors: | HU XIN-WEN ZHAO JUN LU HUI-QING LI XIANG-YANG and FANG JIA-XIONG |
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| Abstract: | Admittance Spectroscopy (AS) measurements have been performed on n+-on-p Hg1-xCdxTe(x=0.6) photodiodes. Before gamma-irradiation, a deep level located 0.15 eV above the valence band is observed, its trap density Nt=4.8×1015cm-3 with the capture cross section of approximately 2.2×10-17cm2, which is probablely induced by a compound defect correlated with Hg vacancy. After 104 Gy gamma-irradiation, a new trap center located 0.19 eV above the valence band is found, and the pre-irradiation trap level 0.15 eV above the valence band is no longer seen. The trap densities for these two levels are almost the same. This defect level change ultimately makes the device performance deteriorated. |
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