Zn1−xMnxO : A typical member of the II-VI:Mn DMS family

ZnO:Mn thin films are grown by MOCVD technique. Mn(x) varies in 0<x<0.44 range. Vegrad’s law has been verified for the lattice parameters. EPR measurements prove the substitution incorporation of Mn²⁺ on zinc sites. The behavior of EPR line-width regarding temperature is discussed. All ZnO:Mn layers show antiferromagnetic interaction and a effective exchange constant. Observation of excitons, giant Zeeman effect, and trace of the Brillouin function is evidence for high quality of the crystal lattice and of substitutional incorporation of manganese ions in place of Zn, as Mn²⁺.