Opto-Electronic Properties of MBE-Grown ZnSSe Thin Films on ITO Substrates |
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| Authors: | D. Shen G. Han |
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| Affiliation: | a Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.b State Key Laboratory of Silicon Material Science, Zhejiang University, Hangzhou, China. |
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| Abstract: | The opto-electronic properties of molecular-beam-epitaxy (MBE)-grown ZnSSe thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. Ultraviolet (UV) photoresponsivity as high as 0.01 A/W and three orders of visible rejection power were demonstrated. The results of d.c. resistivity measurements revealed that the resistivity of the ZnSSe thin films decreased as the crystal size increases and reaches a value of 4.3 × 1011 Ω cm for a thin film grown at the optimized substrate temperature of 290°C. The results of a.c. impedance measurements performed in the frequency range of 40 to 4000 Hz further indicated that the impedance of this alloy thin film can provide a good match with the liquid crystal layer of a liquid crystal light valve for UV imaging applications. |
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| Keywords: | ZhSSe/ITO thin films MBE opto-electronic properties |
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