微波等离子体化学汽相沉积法沉积CNx膜的研究

对用微波等离子体化学汽相沉积法沉积在Si基片上的CN_x膜分别进行Raman散射、X射线光电子能谱、X射线衍射和扫描电子显微镜等技术的分析与测试. Raman散射的研究结果表明在CH₄与N₂的流量比低于1∶8时，CN_x膜的散射谱中以非晶石墨峰的形式出现.当流量比为1∶8时，则表现为较尖锐的C≡N键(2190cm^-1)的特征峰；从X射线光电子能谱的分析结果可以看出C，N成键的方式主要是C≡N键和C—N关键词：

STUDIES OF CNx FILMS DEPOSITED BY MEANS OF MICROWAVE PLASMA CVD METHOD

CN_x films deposited on Si substrates with microwave plasma chemical vapor deposition method are measured and analyzed using Raman scattering,X-ray photoelectron spectrum,X-ray diffraction and scanning electron microscopy techniques.The result of Raman spectrum shows the amorphous graphite peak around 1600cm^-1 with the flow ratio of CH₄ and N₂ below 1∶8.As the flow ratio is equal to 1∶8,a characteristic peak around 2190cm^-1 exists,which represents C≡N bond.According to the XPS results,the binding pattern of C and N are seen to be of C—N bond and C≡N bond.There is no diffraction peaks corresponding to β-C₃N₄ phase in the XRD pattern.The gas pressure has influence on the deposited rate of the film.