| B+注入HgCdTe快速热退火的研究 |
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| 引用本文： | 刘家璐,张廷庆,冯建华,周冠山,应明炯.B+注入HgCdTe快速热退火的研究[J].物理学报,1998,47(1):47-52. |
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| 作者姓名： | 刘家璐 张廷庆 冯建华 周冠山 应明炯 |
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| 作者单位： | (1)电子工业部第11研究所，北京 100015; (2)西安电子科技大学微电子研究所，西安 710071 |
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| 摘 要： | 借助二次离子质谱和俄歇电子能谱对B+注入HgCdTe有无ZnS膜包封在快速热退火条件下表层的Hg损失进行了深入的分析-快速热退火温度为300，350和400℃，退火时间为10s-ZnS膜厚度为160nm-结果表明，300℃，10s快速热退火后，有ZnS膜包封的HgCdTe表层没有Hg损失-对B+注入HgCdTe N+-P结快速热退火工艺流程进行了优化-结果表明，快速热退火放在光刻金属电极之后进行，可以改善结的特性-
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| 关 键 词： | 硼离子 离子注入 碲镉汞 工艺优化 快速热退火 |
| 收稿时间： | 5/4/1997 12:00:00 AM |
STUDY OF B+-IMPLANTED HgCdTe UNDER RAPID THERMAL ANNEALING |
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| LIU JIA-LU,ZHANG TING-QING,FENG JIAN-HUA,ZHOU GUAN-SHAN and YING MING-JIONG.STUDY OF B+-IMPLANTED HgCdTe UNDER RAPID THERMAL ANNEALING[J].Acta Physica Sinica,1998,47(1):47-52. |
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| Authors: | LIU JIA-LU ZHANG TING-QING FENG JIAN-HUA ZHOU GUAN-SHAN and YING MING-JIONG |
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| Abstract: | Hg loss of B+-implanted HgCdTe with and without a ZnS film under rapid thermal annealing(RTA) has been analysed by secondary ion mass spectroscopy and Auger electron spectroscopy in detail- The temperatures for RTA are 300, 350 and 400℃, and the duration is 10s- The thickness of ZnS film is 160nm- Results obtained show that the surface layer of HgCdTe with a ZnS film does not show Hg loss after RTA (300℃,10s)- The procedure of RTA for B+-implanted HgCdTe forming N+-P junction has been optimized- It was shown that RTA carried out after the lithography of the metal electrode can improve the junction characteristics- |
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