Growth dynamics of Ge1?xSix single crystals obtained by directional constitutional supercooling of the melt

The problem of growth dynamics for crystals of binary solid solutions, obtained by the constitutional supercooling of the melt with a silicon feeding rod, has been solved within the Pfann approximation. The dependences of the change in the axial growth rate of Ge_1−x Si _x crystals (0 ≤ x ≤ 0.3) are calculated. It is shown that the Ge_1−x Si _x crystallization rate significantly changes during growth. The results make it possible to determine the optimal conditions and technological parameters for growing Ge_1−x Si _x single crystals (0 ≤ x ≤ 0.3) with a specified concentration gradient along the crystallization axis.