Self-consistent calculation of Landau levels of a quasi-two-dimensional hole gas at a GaAs/AlGaAs p-type heterojunction

An efficient method is proposed for the self-consistent calculation of Landau levels of a quasi-two-dimensional hole gas at a GaAs/AlGaAs heterostructure in a perpendicular magnetic field. The method is based on transforming the Schroedinger and Poisson equations to a system of nonlinear differential equations which are then spatially discretized and solved by the method of relaxation. The method proposed is used to model the optical spectra for recombination of the quasi-two-dimensional hole gas with electrons localized at a dlayer of donors in an isolated p-type heterojunction. Particular attention is paid to effects associated with the dependence of the wave functions and shape of the potential well on the magnetic field, which have not been considered before. Fiz. Tverd. Tela (St. Petersburg) 40, 1117–1125 (June 1998)