32 × 32 SOI CMOS image sensor with pinned photodiode on handle wafer |
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Authors: | Yong-Soo Cho H Takao K Sawada M Ishida Sie-Young Choi |
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Institution: | (1) Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 441-8580 Toyohashi, Aichi, Japan;(2) School of Electrical Engineering and Computer Science, Kyungpook National University, 1370 Sangyuk-Dong, 702-701 Buk-Gu, Daegu, Republic of Korea |
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Abstract: | We have fabricated a 32 × 32 silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) active pixel image
sensor with a pinned photodiode on a handle wafer. The structure of one pixel is a four-transistor type active pixel sensor
(APS) which consists of a reset and a source follower transistor on a seed wafer, and is comprised of a photodiode, a transfer
gate, and a floating diffusion on the handle wafer. The photodiode could be optimized for better quantum efficiency and low
dark currents because its process on the handle wafer is independent of that of transistors on a seed wafer. Most of the wavelengths
are absorbed within the visible range, because the optimized photodiode is located on the handle wafer. The image has been
captured by the fabricated 32 × 32 SOI CMOS image sensor with array pixels, vertical scanner, horizontal scanner, and delta-difference
sampling circuit. |
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Keywords: | pinned photodiode SOI image sensor CMOS image sensor APS 4 transistor |
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