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The Hall effect in quench-condensed Ti1-x V x thin films |
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| Authors: | B. Bandyopadhyay P. Watson Yin Bo D. G. Naugle V. M. Nicoli |
| Affiliation: | (1) Physics Department, Texas A&M University, 77843 College Station, Texas, USA;(2) Present address: Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing, China;(3) Present address: Universität (TH), D-7500 Karlsruhe, FRG;(4) Present address: General Dynamics, Pomona Division, P.O. Box 2507, 91769 Pomona, CA, USA |
| Abstract: | Measurements of the Hall coefficient of as quenched (amorphous) and annealed (polycrystalline) Ti–V alloy films are reported. The Hall coefficient is positive for both amorphous and polycrystalline films. The electrical resistivity for the as quenched samples is large ( 190  cm) and relatively independent of alloy concentration. |
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