| 几种半导体在高压下的金属化相变 |
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| 引用本文： | 鲍忠兴 Tu.,CS.几种半导体在高压下的金属化相变[J].高压物理学报,1996,10(1):50-55. |
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| 作者姓名： | 鲍忠兴 Tu. CS |
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| 作者单位： | 中国科学院物理研究所，中国科学院国际材料物理中心 |
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| 摘 要： | 在金刚石压砧装置上，采用我们建立的电阻测量方法，研究了半导体InP0.97As0.03、InP0.5As0.5、Ga0.76In0.24As和Ga0.24In0.76As在室温下、16 GPa内的电阻与压力的关系。工作中，对测量技术进行了一些改进，采用微机进行测量控制和数据记录。实验结果表明，这些样品在测量的压力范围内，均发生了金属化相变。它们的相变压力分别为：10.3、9.7、13.5~14.6和10~10.4 GPa左右。这些实验结果在过去发表的文章中未见报导过。
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| 关 键 词： | 半导体 金属化相变 电阻测量 |
| 收稿时间： | 1995-03-06; |
Metallic Transitions in Several Kinds of Semiconductors at High Pressure |
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| BAO Zhong-Xing,Tu C S,erson J R,Schmidt V H,Pinto N J.Metallic Transitions in Several Kinds of Semiconductors at High Pressure[J].Chinese Journal of High Pressure Physics,1996,10(1):50-55. |
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| Authors: | BAO Zhong-Xing Tu C S erson J R Schmidt V H Pinto N J |
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| Institution: | 1. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;2. International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110015, China;3. Department of Physics, Montana State University, Bozeman MT 59717, USA |
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| Abstract: | Resistance-pressure (R-p) relationships in InP0.97As0.03, InP0.5As0.5, Ga0.76In0.24As and Ga0.24In0.76As at room temperature at high pressure have been studied in a diamond anvil cell using resistance measurement. Experimental results indicate that these samples all undergo metallic transitions in the measured pressure range, and their transition pressures are about 10.3, 9.7, 13.5~14.6 and 10~10.4 GPa, respectively. Some improvements were made on the measurement techniques. |
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| Keywords: | semiconductor metallic transition resistance measurement |
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