Passivation of the facets of 980 nm GaAs pump lasers by a pulsed UV laser-assisted technique |
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| Authors: | S. Kerboeuf M. Bettiati J. L. Gentner C. Belouet J. Perrière J. Jimenez E. Martin |
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| Affiliation: | (1) Alcatel CIT, Etablissement de Marcoussis, route de Nozay, F-91461 Marcoussis Cedex, France;(2) Groupe de Physique des Solides, CNRS UMR 7588, Universités Paris VI et VII, 2, place Jussieu, 75251 Paris Cedex 05, France;(3) Fisica de la Materia Condensada, Cristalografia y Mineralogia, Facultad de Ciencias y ETS de Ingenieros Industriales, Universidad de Valladolid, 47011 Valladolid, Spain |
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| Abstract: | It is reported on the passivation of the mirror facets, opened in the air, of ridge waveguide InGaAs/GaAs/AlGaAs single quantum well (λ=980 nm) laser diodes. The passivation concept consists of two steps, namely, oxide removal by irradiation of the mirror facets with a pulsed KrF laser, immediately followed by the deposition of a thin silicon layer. The experimental arrangement (the process operation and the aging behavior-resistance to catastrophic optical damage) of the lasers thus treated are described. The structural modification of the laser facets, as probed by micro-Raman spectroscopy and Rutherford backscattering spectroscopy, and the calibration technique used to assess the rate of oxide removal are also presented. |
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| Keywords: | Catastrophic optical damage (COD) nuclear reaction analysis (NRA) passivation pulsed laser-assisted deposition (PLD) pulsed laser-assisted etching (PLE) pump laser Raman spectroscopy ridge waveguide (RWG) laser diodes Rutherford backscattering spectroscopy (RBS) |
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