位错的会聚束电子衍射研究

从硅位错附近得到的会聚束电子衍射图样表明高阶劳厄带线和菊池线分裂,晶体学等效的衍射显示不同的分裂或不分裂,这些结果可以用晶体缺陷的衍衬理论来解释,不分裂的衍射相当于位错的不可见,即g·b=0,会聚束电子衍射提供了强有力的研究缺陷的高空间分辨率手段。 关键词：

CONVERGENT-BEAM ELECTRON DIFFRACTION STUDY OF DISLOCATIONS

Convergent-beam electron diffraction near a dislocation in silicon shows that some of the higher-order Laue zone lines and Kikuchi lines are split. The splitting of crystal-lographically equivalent reflections is different. These can be explained in terms of the theory of diffraction contrast of imperfect crystals. The splitting and unsplitting of the reflections correspond to the visibility and in visibility of the dislocation. Convergent-beam electron diffraction provides a powerful means for the study of crystal defects with high spatial resolution.