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Laser emission efficiency of semiconductor target of gas diode in the picosecond range |
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| Authors: | A. S. Nasibov K. V. Berezhnoy M. B. Bochkarev A. G. Sadykova S. A. Shunailov M. I. Yalandin |
| Affiliation: | 1.Lebedev Physical Institute,Russian Academy of Sciences,Moscow,Russia;2.Institute of Electrophysics, Ural Branch,Russian Academy of Sciences,Ekaterinburg,Russia |
| Abstract: | Laser radiation excited in a cadmiumsulfide semiconductor target (ST) (λ = 522 nm) by a high-intensity subnanosecond electron beam (EB) with an energy of 70–150 keV has a maximum intensity of 3 · 107W/cm2 at an efficiency of~10%. Lasing arose at the EB exciting pulse front. The laser radiation pulse shape reproduced the EB pulse shape. |
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