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Preparation of size controllable copper nanocrystals for nonvolatile memory applications
Authors:Wang Li  Sun Hong-Fang  Zhou Hui-Hua  Zhu Jing
Affiliation:Beijing National Center for Electron Microscopy, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Abstract:A method of fabricating Cu nanocrystals embedded in SiO2 dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocrystal grains are controlled by adjusting experimental parameters. The relationship between nanocrystal floating gate micro-structure and its charge storage capability is also discussed theoretically.
Keywords:nanocrystal grain  nonvolatile memory  Coulomb blockade effect  magnetron sputtering
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