Trapping levels in PbI2

A first investigation on trapping levels in PbI₂, performed by the Thermally Stimulated Current (TSC) technique, is presented. Three hole trapping centers are evidenced at 0.12, 0.29 and 0.59 eV above the valence band, with densities ranging between 8 × 10¹⁴ and 5 × 10¹⁶ cm^?3 and capture cross-sections between 8 × 10^?21 and 3 × 10^?17 cm². The center at 0.59 eV is likely responsible for the relatively short trapping time in PbI₂, as determined with nuclear techniques. By using a particular method, the behaviour of hole drift mobility along the layers as a function of temperature is determined for the first time. Finally, the presence of a spurious peak, not sensitive to irradiation, is reported and discussed.