Phonon detection by shallow electronic trap states in luminescent ZnO |
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Authors: | R Baumgartner W Eisfeld G Pauli KF Renk N Riehl |
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Institution: | Institut für Angewandte Physik, Universität Regensburg, 8400 Regensburg, West Germany |
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Abstract: | High-frequency acoustic phonons are detected in a ZnO crystal by phonon- induced luminescence radiation. Our experiments indicate that this radiation is caused by recombination processes of carriers captured at very shallow traps with an ionization energy of about 4 meV. Propagation of the phonons is studied by a time of flight method. |
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