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Electronic properties of the layer semiconductor InSe |
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| Authors: | Y Depeursinge E Doni R Girlanda A Baldereschi K Maschke |
| Institution: | Départment de Mathématiques, EPF-Laussane, Switzerland;Istituto di Fisica Dell''Università and GNSM-CNR, Pisa, Italy;Istituto di Struttura della Materia Dell''Università and GNSM-CNR, Messina, Italy;Laboratoire de Physique Appliquée, EPF-Laussane, Switzerland |
| Abstract: | The three-dimensional band structure of InSe is calculated by the tight-binding and pseudopotential methods. The two band structures have many features in common and both agree with most optical and photoemission data. The high ionicity of this compound is reflected in the low dispersion of the energy bands and is evidenced by a calculation of the total valence charge density. |
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