Conversion electron Mössbauer study of amorphous FeSi thin films |
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Authors: | RS Oswald M Ron M Ohring |
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Institution: | Department of Materials and Metallurgical Engineering, Stevens Institute ofTechnology, Hoboken, NJ 07030, U.S.A. |
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Abstract: | Amorphous FeSi films deposited at 77 K and at room temperature were studied by CEMS. The CEMS reflection spectra for bulk FeSi show quadrupole splittings, ΔES, larger by ~ 0.04 mm sec?1 than ΔEB - the ones shown by transmission spectra.For amorphous FeSi films ΔE was found (a) to decrease with the thickness of the film, and (b) to be by 25% larger for an amorphous film than for a crystallized one (of the same thickness).The crystallization was found to start at 240°C for a 300 Å thick film. |
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