A TIN-119 Mössbauer and electrical conductivity study of the system SnxGe1-xSe (0 ? x ? 1) |
| |
| Authors: | T Abraham C Juhasz J Silver JD Donaldson MJK Thomas |
| |
| Institution: | Electrical Engineering Department, Imperial College, London SW7, England;Department of Chemistry, Chelsea College, Manresa Road, London SW3 6LX, England |
| |
| Abstract: | 119Sn Mössbauer parameters and electrical conductivity data for phases in the system SnxGe1-xSe (0 ? x ? 1) are reported. The Mössbauer data for the material Sn0.8Ge0.2Se show that the electron distribution around the Sn at this composition is anomalous. There is, however, little indication of the presence of such an anomaly in the electrical conductivity and Hall Effect data. The implications of these observations are discussed. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
