Self-trapping of the <Emphasis Type="Italic">d</Emphasis>-<Emphasis Type="Italic">d</Emphasis> charge transfer exciton in bulk NiO evidenced by X-ray excited luminescence |
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Authors: | V I Sokolov V A Pustovarov V N Churmanov V Yu Ivanov N B Gruzdev P S Sokolov A N Baranov A S Moskvin |
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Institution: | 1.Institute of Metal Physics, Ural Branch,Russian Academy of Sciences,Yekaterinburg,Russia;2.Ural Federal University,Yekaterinburg,Russia;3.Moscow State University,Moscow,Russia;4.Department of Theoretical Physics, Institute of Natural Science,Ural Federal University,Yekaterinburg,Russia |
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Abstract: | Soft X-ray (XUV) excitation did make it possible to avoid the predominant role of the surface effects in luminescence of NiO and revealed a bulk luminescence with a puzzling well isolated doublet of very narrow lines with close energies near 3.3 eV which is assigned to recombination transitions in self-trapped d-d charge transfer (CT) excitons formed by coupled Jahn-Teller Ni+ and Ni3+ centers. The conclusion is supported both by a comparative analysis of the CT luminescence spectra for NiO and solid solutions Ni x Zn1 − x O, and by a comprehensive cluster model assignment of different p-d and d-d CT transitions, their relaxation channels. To the best of our knowledge, it is the first observation of the luminescence due to self-trapped d-d CT excitons. |
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