| Abstract: | The axio-electric effect in silicon atoms is sought for solar axions appearing owing to bremsstrahlung and the Compton process. Axions are detected using a Si(Li) detector placed in a low-background setup. As a result, a model-independent constraint on the axion-electron coupling constant |g Ae | ≤ 2.2 × 10−10 has been obtained, which leads to the bounds m A ≤ 7.9 eV and m A ≤ 1.4 eV (at 90% C.L.) for the mass of the axion in the DFSZ and KSVZ models, respectively. |
