Influence of the dopant concentration in In-doped SrTiO3 on the structural and transport properties |
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| Authors: | T Fix R Bali N Stelmashenko MG Blamire |
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| Institution: | aDepartment of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom |
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| Abstract: |  thin films are grown epitaxially on NdGaO3 (001) and characterized for x=0, 0.005, 0.02, 0.1, 0.2, 0.5. While films with x=0, 0.2 and 0.5 are insulating, the ones with x=0.005, 0.02 and 0.1 are semiconducting and show a p-type behaviour. Highly rectifying diodes composed of SrIn0.005Ti0.995O3 grown on SrNb0.02Ti0.98O3 thin films confirm this behavior. Therefore the use of In as a dopant in SrTiO3 is promising in the field of semiconductors. |
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| Keywords: | A Semiconductors A Thin films B Epitaxy |
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