Distribution of electron density of states in allowed bands and interband absorption in amorphous semiconductors |
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| Authors: | S Zainobidinov R G Ikramov R M Zhalalov M A Nuritdinova |
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| Institution: | 1.Andijan State University,Andijan,Uzbekistan;2.Namangan State University,Namangan,Uzbekistan |
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| Abstract: | Different types of electronic transitions and the corresponding spectral characteristics of the absorption coefficient of
amorphous semiconductors, where the energy of absorbed photons exceeds the mobility band gap, have been investigated. Partial
spectral characteristics of the absorption coefficient and, correspondingly, the distributions of the electron density of
the states involved in these optical transitions are obtained for the case where the electron densities of states in the allowed
bands and the tails of these bands change with energy according to the power and exponential laws, respectively. The conditions
for the occurrence of a peak in the spectral characteristic of the interband absorption coefficient are determined. |
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