Investigation of the peculiarities of Ge island growth on Si (100) under MBE conditions |
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| Authors: | V. A. Lapin B. M. Sinel’nikov M. D. Bavizhev I. A. Sysoev D. S. Kuleshov F. F. Malyavin |
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| Affiliation: | 1. North Caucasus State Technical University, Stavropol, Russia
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| Abstract: | The results of investigating the features of Ge-island formation on Si (100) under conditions of molecular-beam epitaxy is presented. Nanosized structures at heteroboundaries (islets and quantum dots) are attracting great interest due to new useful properties and broad prospects of their application. |
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