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1.3-μm GaInAsP/InP Multi-Quantum-Well Surface-Emitting Lasers |
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| Authors: | Seiji Uchiyama Takao Ninomiya |
| Institution: | (1) Optoelectronics Furukawa Laboratory, Real World Computing Partnership, c/o Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., 2-4-3, Okano, Nishi-ku, Yokohama 220, Japan |
| Abstract: | A multi-quantum-well (MQW) active layer has been introduced to 1.3-μm GaInAsP/InP surface-emitting (SE) lasers. Room temperature pulsed operation of a 1.3-μm MQW SE laser was obtained for the first time and its threshold current was 15 mA. CW (continuous wave) operation up to 7°C (threshold current 1th=7.6 mA at 7°C) was achieved. |
| Keywords: | surface emitting laser multi-quantum well low threshold current buried heterostructure Si/ Al2O3 GaInAsP/InP |
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