1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394693, Russia 2. Fachbereich Physik der Martin-Luther-Universit?t Halle-Wittenberg, Halle/Saale, D-06108, Deutschland
Abstract:
A technique involving combined photoreflectance/photoluminescence measurements is proposed to study the electronic properties of semiconductor surfaces. The efficiency of the technique is illustrated by a study of the growth and degradation of the luminescence signal from selenium-passivated GaAs substrates under CW laser excitation.