Preparation of SiC nanowires with fins by chemical vapor deposition |
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| Institution: | 1. School of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, PR China;2. College of Mechanical and Electrical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong, PR China;1. School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, PR China;2. Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024, PR China;1. Université François Rabelais, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France;2. CRHEA, CNRS-UPR10, rue Bernard Gregory, 06560 Valbonne, France;1. Laboratoire des Technologies de la Microélectronique, CNRS UMR 5129, 17 rue des martyrs, 38054 Grenoble cedex 9, France;2. Science et Ingénierie des Matériaux et Procédés, 38402 Saint Martin d׳Hères, France;1. Physics Department, Korea University, Seoul 136-713, South Korea;2. Physics Department, University of Notre Dame, Notre Dame, IN 46556, USA;1. Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;2. R&TD Center, Tsukuba Plant, LED Materials Department, Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan |
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| Abstract: | SiC nanowires with fins have been prepared by chemical vapor deposition in a vertical vacuum furnace by using a powder mixture of milled Si and SiO2 and gaseous CH4 as the raw materials. The products were characterized by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). These investigations confirm that the nanowires with fins are cubic β-SiC. The diameter of the fins is about 100–120 nm and the diameter of the inner core stems is about 60–70 nm. The formation process of the β-SiC nanowires with fins is analyzed and discussed briefly. |
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