| A 0.18-μm 3.3 V 16 k Bits 1RIT Phase Change Random Access Memory （PCRAM） Chip |
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| 作者姓名： | 丁晟 宋志棠 刘波 朱敏 陈小刚 陈一峰 沈菊 富聪 封松林 |
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| 作者单位： | State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, ShanghM Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| 基金项目： | Supported by the National Basic Research Programme of China under Nos 2007CB935400 and 2006CB302700, the National High-Technology Research and Development Programme of China under Grant Nos 2008AA031402 and 2006AA03Z360, the Science and Technology Council of Shanghai under Grant Nos 0752nm013, 07QA14065 and 07SA08, and National Nature Science Foundation of China under Grant No 60776058. |
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| 摘 要： | Using standard 0.18-μm CMOS process and the special platform for S-inch phase change random access memory （PCRAM）, the first Chinese 16k bits PCRAM chip has been successfully achieved. A 1RIT structure has been designed for low voltage drop and low cost compared to the 1RlD structure and the BJT-switch structure. Full integration of the 16k bits PCRAM chip, including memory cell, array structure, critical circuit module, and physical layout, has been designed and verified. The critical integration technology of the phase change material （PCM） fabrication and the standard CMOS process has been solved. Test results about PCM in a large-scale array have been generated for the next research of PCRAM chip.
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| 关 键 词： | 相变随机存取存储器 存储结构 COMS过程 相变材料 |
| 收稿时间： | 2008-06-03 |
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