A high-gain porous silicon metal–semiconductor–metal photodetector through rapid thermal oxidation and rapid thermal annealing |
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| Authors: | M.-K. Lee Y.-C. Tseng C.-H. Chu |
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| Affiliation: | (1) Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan, ROC (Fax: +07-5/254-199), TW |
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| Abstract: | 2 tungsten lamp at 1.83 mA excited by a 0.85-mW 675-nm laser diode. We also demonstrate that the dark current could be greatly reduced through rapid thermal oxidation and rapid thermal annealing. Received: 4 August 1997/Accepted: 28 May 1998 |
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| Keywords: | PACS: 68.35 72.20 |
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