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Quantized Double‐Layer Charging of Iron Oxide Nanoparticles on a‐Si:H Controlled by Charged Defects in a‐Si:H |
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| Authors: | Martin Weis Katarína Gmucová Vojtech Nádaždy Ignác Capek Alexander Šatka Martin Kopáni Július Cirák Eva Majková |
| Institution: | 1. Department of Physics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, SK‐812 19 Bratislava, Slovak Republic;2. Institute of Physics, Slovak Academy of Sciences, SK‐845 11 Bratislava, Slovak Republic;3. Polymer Institute, Slovak Academy of Sciences, SK‐842 36 Bratislava, Slovak Republic;4. International Laser Centre, Ilkovi?ova 3, SK‐812 19 Bratislava, Slovak Republic;5. Comenius University, Bratislava, Slovak Republic |
| Abstract: | Sequential single‐electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir‐Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film (a‐Si:H) is reported. Quantized double‐layer charging of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the excess of negative/positive charged defect states in the a‐Si:H layer. The particular charge states in a‐Si:H are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. |
| Keywords: | Quantized double‐layer charging Nanoparticles Amorphous silicon Langmuir‐Blodgett layers Voltammetry |